0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization.
IEEE Journal of Solid-State Circuits(2016)
摘要
In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to `1' or `0'. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same column. In this work, we overcome this challenge by using a column-based randomization engine (CBRE). T...
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关键词
Sensors,SRAM cells,Circuit stability,Leakage currents,Transistors,Thermal stability
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