Spin-Transfer Torque Memories: Devices, Circuits, and Systems

    Proceedings of the IEEE, Volume 104, Issue 7, 2016, Pages 1449-1488.

    Cited by: 51|Bibtex|Views5|Links
    EI

    Abstract:

    Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent integration density, acceptable read and write performance, and compatibility with CMOS process technology. However, several obstacles need to be overcome for STT-M...More

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