Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt

Hiroki Yamaoka,Takuya Yamashita,Akinori Harada,Atsushi Sakaguchi,Kentaro Kinoshita,Satoru Kishida,Shuichi Hayase,Toshiki Nokami,Toshiyuki Itoh

CHEMISTRY LETTERS（2017）

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摘要

Significant improvement in cycling endurance and operating voltage dispersion has been accomplished by the addition of Cu-doped triglyme (G3) to the HfO2 film of the Cu/HfO2/Pt-type conducting-bridge random access memory (CB-RAM); both the V-set distribution and the charge-transfer resistance ( R-ct) values were significantly reduced.

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关键词

Ionic liquid,Conducting-bridge random access memory (CB-RAM),Cu-doped triglyme

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