14nm FinFET based supply voltage boosting techniques for extreme low Vmin operation
2015 Symposium on VLSI Circuits (VLSI Circuits)(2015)
摘要
This paper presents new dynamic supply and interconnect boosting techniques for low voltage SRAMs and logic in deep 14nm FinFET technologies. The capacitive coupling in a FinFET device is used to dynamically boost the virtual logic and array supply voltage, improving V
min
. Hardware measurements show a 2.5-3x access time improvement at lower voltages and a functional V
min
down to 0.3V. Results are supported by novel physics-based capacitance extraction and novel superfast statistical circuit simulations.
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关键词
FinFET based supply voltage boosting techniques,supply and interconnect boosting techniques,low voltage SRAM,capacitive coupling,FinFET device,virtual logic,array supply voltage,voltage 0.3 V
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