14nm FinFET based supply voltage boosting techniques for extreme low Vmin operation

2015 Symposium on VLSI Circuits (VLSI Circuits)(2015)

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摘要
This paper presents new dynamic supply and interconnect boosting techniques for low voltage SRAMs and logic in deep 14nm FinFET technologies. The capacitive coupling in a FinFET device is used to dynamically boost the virtual logic and array supply voltage, improving V min . Hardware measurements show a 2.5-3x access time improvement at lower voltages and a functional V min down to 0.3V. Results are supported by novel physics-based capacitance extraction and novel superfast statistical circuit simulations.
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关键词
FinFET based supply voltage boosting techniques,supply and interconnect boosting techniques,low voltage SRAM,capacitive coupling,FinFET device,virtual logic,array supply voltage,voltage 0.3 V
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