Magnetoresistance Implications For Complementary Magnetic Tunnel Junction Logic (Cmat)

PROCEEDINGS OF THE 2015 IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES (NANOARCH 15)(2015)

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摘要
This concept paper provides a first quantitative analysis of complementary magnetic tunnel junction logic (CMAT), a novel cascaded logic family composed solely of magnetic tunnel junctions (MTJs). CMAT is a non-volatile logic family driven by field-induced spin-switching that was inspired by CMOS. A compact CMAT multiplexer is presented, and the impact of magnetoresistance on its behavior is analyzed. The efficiency of CMAT is shown to be a function of the MTJ magnetoresistance, providing impetus for further development of MTJs for computing applications.
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关键词
spintronic logic,magnetic tunnel junction,beyond-CMOS computing,non-Von Neumann architecture
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