A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction.

Alexander Fritsch,Michael Kugel,Rolf Sautter,Dieter F. Wendel,Juergen Pille,Otto A. Torreiter, Shankar Kalyanasundaram, Daniel A. Dobson

Proceedings of the European Solid-State Circuits Conference（2015）

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摘要

A 4GHz, low latency TCAM in 14nm SOI FinFET technology, using a matchline current sensing scheme with an energy consumption of 0.63 fJ/bit/search at 0.9V and a peak current reduction of 50% compared to voltage sensing implementations. A by entry adjustable search depth allows to reduce power consumption for variable size translation tables. The implemented sandwich floorplan enables an area efficient integration of high performance 0.286 mu m(2) 16T-TCAM and 0.143 mu m(2) 8T-SRAM cells.

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关键词

CAM,SRAM,TCAM,current sensing,14nm SOI,circuit design

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