A Novel Pseudo Resistor Structure For Biomedical Front-End Amplifiers

This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 mu m CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.