Characterization and modeling of low-frequency noise in CVD-grown graphene FETs

In this paper, we report the low-frequency noise characterization of CVD-grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of flicker noise levels and impact of access resistances on the noise response. The noise level inversely depends on the graphene area of the GFETs indicating that the locations of the primary noise sources are in the graphene layers. The flicker and Johnson noise sources are introduced in a compact model with DC parameters of the CVD GFET. Results from the noise compact model are validated with the measurement results showing good agreement.