An Extended Direct Power Injection Method for In-Place Susceptibility Characterization of VLSI Circuits Against Electromagnetic Interference

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2015)

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摘要
The direct radio frequency power injection (DPI) method was extended using on-chip voltage waveform monitoring and built-in self-test techniques. Static random access memory (SRAM) has been chosen as a demonstrator of the extended DPI method and exhibits a higher susceptibility against the lower interference frequency. This response is explained when we consider the time length of the threshold ag...
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关键词
Random access memory,Voltage measurement,Radio frequency,Bit error rate,Very large scale integration,Semiconductor device measurement,Built-in self-test
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