Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE(2015)
摘要
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be...
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关键词
Phase change materials,Switches,Programming,Memory management,Random access memory,Information processing,Crystallization
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