Reconfigurable Memristive Device Technologies

Proceedings of the IEEE(2015)

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摘要
In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.
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关键词
Memristor,radiation effects,ReRAM,3-D integration
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