Compact noise modelling for common double-gate metal-oxide-semiconductor field-effect transistor adapted to gate-oxide-thickness asymmetry.

On the basis of the quasi-linear relationship between the surface potentials of a common double-gate metal-oxide-semiconductor field-effect transistor, a compact noise model, which is adapted to gate-oxide-thickness asymmetry, is proposed. The proposed model includes a physics-based thermal and flicker noise model. The effect of the lateral and vertical electric fields on the mobility degradation ...