MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.