Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Recent progress in the fabrication and performance of 1.3-μm 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity adjustment technique, the wavelength yield was increased to up to 70% for all four coarse wavelength division multiplexing (CWDM) channels implemented. It was demonstrated that single-mode devices can have threshold and operation currents below 1 and 7mA, respectively, in the full 0–80°C temperature range. The reproducibility of the fabrication process and prospects for enhancing performance and yield of such VCSELs are also discussed.