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Effects of Well Widths and Well Numbers on InP-based Triangular Quantum Well Lasers Beyond 2.4 Μm

Y. Gu,Y. G. Zhang,X. Y. Chen,Y. Y. Cao,L. Zhou,S. P. Xi,A. Z. Li,Hsby Li

JOURNAL OF CRYSTAL GROWTH（2015）

引用 3|浏览36
关键词
Molecular beam epitaxy,Arsenates,Semiconducting III-V materials,Laser diodes
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