WeChat Mini Program
Old Version Features

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Solid-State Electronics(2013)

Cited 6|Views65
Key words
SiGe,MOS,FET,Semiconductor,Device simulation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined