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Study of Charge Trapping Characteristics of SONOS with Various Trapping Layers Using Gate-Sensing and Channel-Sensing (GSCS) Method

Jeng-Hwa Liao,Hsing-Ju Lin,Hang-Ting Lue,Pei-Ying Du,Jung-Yu Hsieh,Ling-Wu Yang,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

Solid-State Electronics（2013）

Cited 0|Views47
Key words
Memory,SONOS,Gate-sensing and channel-sensing,NAND flash,Electron hopping,Charge trap efficiency
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