80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices

Solid-State Electronics(2013)

引用 6|浏览30
暂无评分
摘要
This paper presents a combined pulsed I(V)-pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of ill parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented. (C) 2013 Elsevier Ltd. All rights reserved.
更多
查看译文
关键词
Pulsed I/V measurements,Heterojunction bipolar transistors,Electro-thermal characterisation,Semiconductor device modelling,Thermal impedance
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要