Integration of GMR-based spin torque oscillators and CMOS circuitry

Solid-State Electronics(2015)

引用 13|浏览41
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摘要
•Comprehensive considerations to select a suitable integration approach for GMR STOs.•Complete system to achieve GMR STO–CMOS integration using a wire-bonding approach.•A 17GHz on-chip bias-tee with a maximum DC current handling capacity of 23mA.•An ESD-protected IC with 12dB gain, covering 9–15GHz of GMR STO’s frequency range.•The system improves GMR STO’s output power and eliminates wave reflections.
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关键词
CMOS,Giant magnetoresistance,Integration,On-chip bias-tee,Spin torque oscillator,Wire bonding
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