Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

L Rahhal,A Bajolet,A Cros,C Diouf,Flore Kergomard,J G Rosa,G Bidal,Raulandres Bianchi,Gerard Ghibaudo

Solid-State Electronics（2013）

引用 3|浏览33

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摘要

•Impact of Ge content on Vt, β, and Id mismatches in advanced PMOSFETs.•Global improvement ofelectrical parameters mismatchobserved in PMOSETs with SiGe channel.•The reduction of Coulomb scatteringwith the introduction of Ge improves β mismatch.

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关键词

P-MOS transistors,Bulk technology,High k/metal gate,SiGe channel,Threshold voltage mismatch,Current gain factor/drain current mismatch

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