Reliability of ultra-thin buried oxides for multi- VT FDSOI technology

G Besnard,X Garros,P Nguyen,F Andrieu,Patrick Reynaud,W Van Den Daele,K K Bourdelle,W Schwarzenbach,A Toffoli,R Kies,Daniel Delprat,G Reimbold,Sorin Cristoloveanu

Solid-State Electronics（2014）

引用 20|浏览33

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摘要

•Adapt reliability methods to evaluate the degradation of UTBOX.•Study the carrier trapping and defects generation for breakdown in SOI technology.•Evaluate the quality and lifetime of buried oxides for back-bias applications.

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关键词

Reliability,Fully depleted SOI,Ultra-thin buried oxide,Dynamic threshold voltage,Back-bias

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