Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
Solid-State Electronics(2013)
摘要
•A device Monte Carlo simulator is used in transient regime.•Bulk and XOI III–V MOSFET architectures are benchmark with standard Si Bulk MOSFET.•Both static and dynamic regimes are studied under low supply voltage (VDD).•Noise behavior is carefully investigated.
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关键词
Semiconductor device modelling,Dynamic Monte Carlo simulation,RF performance,Noise figure
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