Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS

M A Py,Emeline Saracco,J F Damlencourt,J P Colonna,E Martinez,V Delaye, J M Fabbri,J P Barnes,J M Hartmann

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2012）

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摘要

The abundance of work on SiGe based devices demonstrates the importance of compositional characterization of such materials. However, SIMS characterization of SiGe layers often suffers from matrix effects due to non-linear variation of ionization yields with Ge content. Moreover, the presence of oxide in these layers would definitely increase the difficulty to obtain quantitative profiles by SIMS.

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关键词

Silicon germanium,ToF-SIMS,Full Spectrum,Ge condensation

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