Neutron-enhanced annealing of ion-implantation induced damage in silicon heated by nuclear reactions

Atsushi Kinomura,Toshimasa Yoshiie,Akiyoshi Chayahara,Yoshiaki Mokuno,Natsuro Tsubouchi,Yuji Horino, Qiuxia Xu,Koichi Sato,Kazuaki Yasuda,Ryoya Ishigami

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2014）

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摘要

•Neutron-enhanced annealing was observed for irradiation damage in Si below 90°C.•The irradiation was performed in a nuclear reactor without intentional heating.•Reduction of damage peaks was detected by Rutherford backscattering/channeling.•The annealing efficiency was comparable to that of ion-beam annealing.

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关键词

Ion implantation,Irradiation damage,Beam annealing,Neutron irradiation

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