AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ·cm2 Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain L-GD spacing of 5 mu m achieved an off-state breakdown voltage V-BR of 800 V and an on-state resistance R-on of 3 m Omega.cm(2). In addition, subthreshold swing S of similar to 97 mV/decade and I-on/I-off ratio of similar to 10(6) were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 mu m, the VBR achieved in this work is the highest. (C) 2012 The Japan Society of Applied Physics