Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene)

We demonstrate ferroelectric gate thin-film transistors (Fe-TFTs) with very thin (60, 110 nm) ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and amorphous indium gallium zinc oxide (a-IGZO) as the channel layer on a glass substrate. First, we confirm the basic ferroelectric properties of the 60- and 110-nm-thick-P(VDF-TrFE) films. Next, we fabricate Fe-TFTs with the Al/P(VDF-TrFE) (60 and 110 nm)/a-IGZO (10 nm) top-gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function is confirmed with memory windows of 2.3 and 4.3 V, when the thicknesses of P(VDF-TrFE) were 60 and 110 nm, respectively. In particular, the Fe-TFTs with 60-nm-thick-P(VDF-TrFE) film were operated under 8 V. (C) 2011 The Japan Society of Applied Physics