Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

The random telegraph noise (RTN) characteristics of high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with SiGe source/drain (SiGe S/D) have been investigated. Trap parameters of HK/MG pMOSFETs with uniaxial strain, such as capture time and emission time, activation energies for capture and emission, trap energy level, and its location in gate dielectric are determined to establish the configuration coordinate diagram for the first time. RTN results showed that HK/MG devices with SiGe S/D undergo high compressive strain, and the trap position (x(T)) from the interfacial layer (IL)-SiO2/Si interface is reduced because of the closer trap energy level near the valence band of silicon. (C) 2013 The Japan Society of Applied Physics