Population Inversion In An Optically-Pumped Single Quantum Well

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS(2000)

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摘要
An optically-pumped intersubband laser generator is proposed in which the continuum states above an Al0.2Ga0.8As - GaAs - Al0.2Ga0.8As single quantum well with a width of L = 17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerably the device fabrication. We have obtained the electronic subband structure of the proposed device and utilized a simple rate equation approach to examine the electron density in different states under optical pumping.
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关键词
inversion,semiconductor device modeling,electrons,quantum well,rate equation,electron density,well,optical pumping,population,population inversion,quantum,gallium arsenide
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