Influences of Preparation Process on the Orientation and Properties of PZT Piezoelectric Thick Film Generation Materials

As it's excellent mechanical and electrical conversion characteristics, Piezoelectric material has become an important material for capturing environmental mechanical energy to get electrical energy. In this paper, (100) oriented PZT piezoelectric thick film has been prepared on Pt/Cr/SiO2/Si substrate by sol-gel used PT as transition layer. The influences of preparation process on the (100) oriented degree, ferroelectric properties, dielectric properties and piezoelectric properties of PZT piezoelectric thick film were investigated. Experiment results show that, the increasing of annealing temperature and shortening annealing time can promote PZT piezoelectric thick film growing along (100) orientation. The increasing of annealing temperature results in the decreasing of remnant polarization intensity and increasing of coercive field. Under the frequency of 1 KHz, (100) oriented PZT piezoelectric thick film with thickness of 1.5. m has the dielectric constant. of 1356, 831 and 780 at annealing time of 5min, 10min and 15min, and dielectric dissipation tand is 0.31,0.20 and 0.22, respectively. (100) orientation of PZT piezoelectric thick film can effectively improve the piezoelectric properties of PZT piezoelectric thick film, PZT piezoelectric thick film with thickness of 1.5. m and annealing time of 5min has the better (100) orientation degree, has the piezoelectric constant d33 of 102.5 pC/N.