(In 0.52 Al 0.48 ) 1− x Mn x As diluted magnetic semiconductor grown on InP substrates

A series of diluted magnetic semiconductors, (In0.52Al0.48)1−xMnxAs (0< x≤0.11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)1−xMnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x≤0.05 and ferromagnetic behaviour when x≥0.06.