Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

It is demonstrated that the self-heating effect easily causes elevated thermal equilibrium condition within the active device for thin substrate MOSFETs. This leads to a non-linearity of the thermal resistance, which originally is a material specific constant. A compact model for describing the observed effective nonlinear thermal resistance has been developed which captures the device geometry effects as well as the bias condition dependences. (C) 2013 The Japan Society of Applied Physics