AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process

This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L-GD of 20 mu m achieved an off-state breakdown voltage V-BR of 1400 V and an on-state resistance R-on of 22 m Omega.cm(2). This is the highest V-BR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio I-on/I-off of similar to 10(9) and low gate leakage current I-G of similar to 10(-11) A/mm were also obtained. (C) 2013 The Japan Society of Applied Physics