Effect of fluorine implantation on recovery characteristics of p-channel MOSFET after negative bias temperature instability stress

In this paper, the effect of fluorine implantation on the recovery characteristics of p-channel MOSFETs (PMOSFETs) after negative bias temperature instability (NBTI) stress was investigated. PMOSFETs using fluorine ion implantation (F-I/I) performed better than those without F-I/I after NBTI stress; it is thought that F-I/I can suppress the generation of permanent damage during NBTI stress. The relationship of Delta V-th and ASS during NBTI stress and recovery showed how much-permanent damage occurred. In addition, we confirmed with a 1/f noise measurement that the device with F-I/I was immune to NBTI stress in spite of a pre-existing bulk trap caused by implantation damage. Moreover, the device with F-I/I had greater activation energy than the device without F-I/I. As indicated by the results, fluorine implantation can decrease the generation of permanent damage under NBTI stress because of the stable Si-F bond. (C) 2014 The Japan Society of Applied Physics