Accurate determination of surface orientation of single‐crystal wafers using high‐resolution X‐ray rocking curve measurements

Theoretical models of the variations of the peak positions of X-ray rocking curves as a function of the azimuthal angle of a single-crystal wafer have been proposed. These models completely describe the variations of the peak positions both when the surface normal of a wafer is parallel and when it is not parallel to the rotation axis of the goniometer used. Based on the models, an accurate measurement method for the surface orientation of a single-crystal wafer with a small surface miscut of 更多