Statistical Evaluation of Electromigration Reliability at Chip Level

IEEE Transactions on Device and Materials Reliability, pp. 86-91, 2011.

Cited by: 10|Views15
EI WOS

Abstract:

Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability...More

Code:

Data:

Get fulltext within 24h
Bibtex
Your rating :
0

 

Tags
Comments