Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology

Adilson S Cardoso,Partha S Chakraborty,Nelson E Lourenco,Peter Song,Troy D England, Eleazar Kenyon,Nedeljko Karaulac,John D Cressler

IEEE Transactions on Nuclear Science（2013）

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摘要

The effects of 63 MeV proton irradiation on the RF performance (insertion loss, isolation, and linearity) of triple-well nFET-based RF switches designed in a 130 nm SiGe BiCMOS technology are investigated. The switches were designed for wide-band operation (1 to 40 GHz) and were required by the application to achieve high isolation (> 35 dB at 40 GHz) with moderate insertion loss (dB at 40 GHz). T...

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关键词

Radio frequency,Transistors,Radiation effects,Linearity,ISO,Substrates,Silicon germanium

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