Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K

Cheryl J Marshall,P W Marshall,R Ladbury,Augustyn Waczynski,Rajan Arora,Roger Foltz,John D Cressler, Duncan M Kahle,D Chen,Gregory Delo,N A Dodds,Jonathan A Pellish,Emily Kan,Nicholas Boehm,R A Reed,Kenneth A Label

IEEE Transactions on Nuclear Science（2010）

引用 18|浏览33

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摘要

Heavy ion-induced single event latchup (SEL) is characterized in a commercially available CMOS readout integrated circuit operating at cryogenic temperatures. SEL observed at 24 K and below is believed to be possible when free carriers produced by an ion strike initiate an exponential increase in the free carrier density via shallow-level impact ionization (SLII). This results in a large current i...

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关键词

CMOS integrated circuits,Ionization,Cryogenic electronics,Temperature dependence

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