Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

R Arora,Zachary E Fleetwood,En Xia Zhang,Nelson E Lourenco,John D Cressler,D M Fleetwood,R D Schrimpf,A K Sutton,G Freeman,Brian J Greene

IEEE Transactions on Nuclear Science（2014）

引用 15|浏览11

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摘要

The total-dose radiation tolerance of 32-nm nFETs is investigated. nFETs built in 32-nm RF-CMOS-on-SOI technology with high-k dielectrics show increased off-state leakage current and electron trapping in the gate oxide. The impact of CMOS-on-SOI technology scaling (from 65-nm to 32-nm) on the total-dose radiation tolerance and hot-carrier reliability (HCR) is investigated through both experiments ...

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关键词

Logic gates,Degradation,Radiation effects,Hot carriers,Reliability,Leakage currents,Transistors

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