Initial Reactions In Ti-Si(Mo) Bilayers

In situ resistance measurements were used to investigate the initial reactions between a titanium film and a molybdenum-doped silicon film. MeV He-4(+) Rutherford spectrometry and X-ray diffraction were also used. An X-ray amorphous layer having the composition TiSix, with x < 2, is first formed. At 500degreesC TiSi2 grows which could be C-40, and above 550degreesC C-54 is formed. The activation energy of the first intermixing process is 3.1+/-0.1 eV, similar to 2.8+/-0.1 eV which was obtained in samples without molybdenum. (C) 2002 Elsevier Science B.V. All rights reserved.