SEMICONDUCTOR MATERIALS: Characteristics of GaN grown on 6H-SiC with different AlN buffersGuojian Ding,Liwei Guo,Zhigang Xing,Yao Chen,Peiqiang Xu,Haiqiang Jia,Junming Zhou,Hong ChenJournal of Semiconductors(2010)引用 23|浏览14暂无评分关键词dislocationsAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要