Synthesis and characterization of Sn-doped β -Ga 2 O 3 nano- and micrometer particles by chemical vapor deposition

Sn-doped β-Ga 2 O 3 nano- and micrometer particles have been successfully synthesized by chemical vapor deposition process using CaF 2 as dispersant and Ni 2+ ions as catalyst. X-ray diffraction indicates that the product was predominantly a single β-Ga 2 O 3 phase with high purity. SEM shows that the product was formed by nano- and micrometer particles with the diameters ranging from 300 to 500 nm. A broad and strong emission band ranging from 300 to 650 nm exists because of larger surface area. The growth process of β-Ga 2 O 3 nano- and micrometer particles agrees with the vapor–solid growth mechanism.