Synthesis of β-Ga 2 O 3 nanorods by catalyzed chemical vapor deposition and their characterization

Journal of Materials Science: Materials in Electronics(2014)

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摘要
β-Ga 2 O 3 nanorods have been synthesized by chemical vapor deposition using CaF 2 as dispersant and Ni 2+ ions as catalyst. The composition, crystal structure, morphology, and optical property were characterized. X-ray diffraction data indicate the product to be high purity β-Ga 2 O 3 . The nanorods are 40–100 nm in diameter and about several microns in length and present a core–shell structure. A broad and strong emission band ranging from 300 to 650 nm exists with four Gaussian bands centered at 357 (UV), 420 (blue), 475 (dark blue), and 529 nm (green). Growth of β-Ga 2 O 3 nanorods agrees with the vapor–solid growth mechanism.
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关键词
Ga2O3,Chemical Vapor Deposition Method,Catalyze Chemical Vapor Deposition,Gaussian Band,Gallium Vacancy
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