Delta-Doping Effects on Quantum-Dot Solar Cells
IEEE Journal of Photovoltaics(2014)
摘要
The effects of delta-doping InAs quantum-dot (QD)-enhanced GaAs solar cells were studied both through modeling and device experimentation. Delta doping of two, four, and eight electrons per QD, as well as nine holes per QD, was used in this study. It was observed that QD doping reduced Shockley-Read-Hallrecombination in the QDs, which results in a reduced dark current and an improved open-circuit ...
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关键词
Doping,Semiconductor process modeling,Gallium arsenide,Photovoltaic cells,Radiative recombination,Silicon,Photonic band gap
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