High-mobility property of crystallized In-Te chalcogenide materials

In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point R s measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In 2 Te 3 and InTe occurred in InTe and In 3 Te 2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In 2 Te 3 , In 3 Te 2 , and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.