Topological transition in Bi 1 – x Sb x studied as a function of Sb doping

Physical Review B(2011)

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摘要
Spin- and angle-resolved photoemission spectroscopy measurements were performed on Bi1-xSbx samples at x = 0.04, 0.07, and 0.21 to study the change of the surface band structure from nontopological to topological. Energy shift of the T and L-s bulk bands with Sb concentration is quantitatively evaluated. An edge state becomes topologically nontrivial at x = 0.04. An additional trivial edge state appears at the L band gap that forms at x > 0.04 and apparently hybridize with the nontrivial edge state. A scenario for the topological transition mechanism is presented. Related issues of self-energy and temperature dependence of the surface state are also considered.
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topological transition
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