RF Linearity Performance Potential of Short-Channel Graphene Field-Effect Transistors
IEEE Transactions on Microwave Theory and Techniques(2015)
摘要
The radio-frequency (RF) linearity performance potential of short-channel graphene field-effect transistors (GFETs) is assessed by using a nonlinear small-signal circuit model under the first approximation of ballistic transport. An intrinsic GFET is examined to reveal the key features of GFET linearity, and extrinsic parasitics are then included to assess the overall RF linearity. It is shown tha...
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关键词
Linearity,Graphene,Radio frequency,Logic gates,Distortion,Quantum capacitance,Transistors
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