Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our knowledge, it is the first time that the temperature dependence of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependence, i.e., a higher temperature lead...