Modeling MOSFET Drain Current Non-Gaussian Distribution With Power-Normal Probability Density Function
IEEE Electron Device Letters(2014)
摘要
In this letter, a family of power-normal probability density functions is proposed for the asymmetric non-Gaussian distribution of drain current. The results of the proposed methodology are compared against both statistical silicon data and SPICE model Monte Carlo simulation results. Excellent agreement is observed for the power-normal distribution with order of 2. With this proposed distribution,...
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关键词
Silicon,Random access memory,SPICE,Monte Carlo methods,Approximation methods,MOSFET,Data mining
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