Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
IEEE Electron Device Letters(2014)
关键词
current density
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要
IEEE Electron Device Letters(2014)