Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm and 112-GHz

A. L. Corrion,Keisuke Shinohara,D. Regan,I. Milosavljevic,P. Hashimoto,P. J. Willadsen,A. Schmitz, D. C. Wheeler,C. M. Butler,D F Brown,Shawn D Burnham,M. Micovic

IEEE Electron Device Letters（2010）

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摘要

An enhancement-mode (E-mode) AlN/GaN/AlGaN double-heterojunction field-effect transistor (DHFET) with record high-frequency performance is reported. E-mode operation was achieved through vertical scaling of the AlN barrier layer. Parasitic resistances were reduced through ohmic contact recess etching followed by regrowth of n+ GaN by molecular-beam epitaxy and SiN deposition to increase the sheet ...

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关键词

Gallium nitride,HEMTs,MODFETs,Aluminum gallium nitride,Logic gates,Silicon compounds,Resistance

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